The use of undulator radiation for atto-wavelength interferometry of EUV lithography optics

Author

Attwood, D. ; Bokor, J. ; Goldberg, K. ; Lee, S. ; Medecki, H. ; Tejnik, E. ; Underwood, J.

Author_Institution

Center for X-ray Opt., Lawrence Berkeley Nat. Lab., CA, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Abstract

At present a program is underway to develop tunable interferometry for extreme ultraviolet (EUV) lithographic optics, with a goal of achieving good wavefront accuracy. Recent tests of a 10X Schwarzschild optic, having Mo-Si coated surfaces optimized for peak reflectivity at 13.4 nm, indicate a wavefront error which would give near-diffraction limited performance

Keywords

X-ray lithography; X-ray optics; electromagnetic wave interferometry; measurement errors; mirrors; optical films; photolithography; undulator radiation; 10X Schwarzschild optic; 13.4 nm; EUV lithography optics; Mo-Si; Mo-Si coated surfaces; atto-wavelength interferometry; good wavefront accuracy; near-diffraction limited performance; peak reflectivity; tunable interferometry; undulator radiation; wavefront error; Bandwidth; Cyclotrons; Electrons; Laboratories; Lithography; Magnetic separation; Optical filters; Optical interferometry; Ultraviolet sources; Undulators;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630505

Filename

630505