Monolithically integrated DFB-MOPA at 670 nm wavelength

Author

Lichtenstein, N. ; Gauggel, H.-P. ; Geng, C. ; Scholz, F. ; Schweizer, H.

Author_Institution

4. Phys. Inst., Stuttgart Univ., Germany

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

83

Abstract

We report on a monolithically integrated DFB master oscillator power amplifier (DFB-MOPA) in the material system GaInP/AlGaInP producing 300 mW of single-lobed power at 673 nm. The DFB-MOPA was realized on a GaInP/AlGaInP single quantum well structure, grown by low-pressure MOVPE. We studied the junction-up mounted DFB-MOPA under long-pulsed operation (20 μs/1 % duty-cycle) at 10°C to maintain most of the cw-operation characteristics. An L-I curve for three different oscillator currents is shown

Keywords

aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; integrated optics; laser transitions; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 20 mus; 300 mW; 670 to 673 nm; DFB master oscillator power amplifier; GaInP-AlGaInP; GaInP/AlGaInP single quantum well structure; L-I curve; cw-operation characteristics; junction-up mounted DFB-MOPA; long-pulsed operation; low-pressure MOVPE; monolithically integrated DFB-MOPA; oscillator currents; single-lobed power; Diffraction; Distributed feedback devices; Epitaxial growth; Gratings; Heat sinks; Operational amplifiers; Oscillators; Power amplifiers; Power generation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630528

Filename

630528