AlGaN based UV LEDs and high frequency transistors

Author

Khan, Asif

Author_Institution

Univ. of South Carolina, Columbia

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

11

Lastpage

15

Abstract

We discuss the recent advances in UV optoelectronic and high frequency electronic devices based on the AlGaN material system. The paper addresses the physical, electrical and optical properties of the material system and how they impact the device performance. We also describe the innovative approaches that lead to the solution of the growth and processing problems and thus enable the fabrication of high efficiency optoelectronic and electronic devices.

Keywords

III-V semiconductors; aluminium compounds; electric properties; light emitting diodes; optical properties; wide band gap semiconductors; AlGaN; AlGaN material system; UV LED; UV optoelectronic devices; electrical properties; high frequency electronic devices; high frequency transistors; optical properties; physical properties; Aluminum gallium nitride; Epitaxial growth; Frequency; Light emitting diodes; Microwave devices; Microwave transistors; Optical device fabrication; Optical materials; Rough surfaces; Surface roughness; AlGaN; detectors; light emitting diodes; microwave transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472443

Filename

4472443