Monolithic integration of GaAlAs superluminescent diode with the optical amplifier

Author

Du, Guotong ; Zhao, Yongsheng ; Li, Xuemei ; Song, Junfeng ; Han, Weihua ; Gao, Dingsan ; Wu, Shengli ; Devane, Gregory ; Stair, Kathleen A. ; Chang, R.P.H.

Author_Institution

State Key Lab., Jilin Univ., Changchun, China

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

138

Abstract

In this report, our recent results of an integrated device are reported. The integrated superluminescent diode (SLD) consisting of an LED/laser diode was fabricated using an AlGaAs SQW heterostructure wafer. A 3 μm-wide superluminescent diode with 300-500 μm length is aligned with the 3 μm-wide input aperture of the tapered amplifier. The amplifier is 1.3-1.5 mm in length and the gain region expands linearly

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; optical fabrication; quantum well lasers; superluminescent diodes; 1.3 to 1.5 mm; 3 mum; 300 to 500 mum; AlGaAs; AlGaAs SQW heterostructure wafer; GaAlAs superluminescent diode; LED; gain region; input aperture; integrated device; integrated superluminescent diode; laser diode; monolithic integration; optical amplifier; superluminescent diode; tapered amplifier; Integrated optics; Monolithic integrated circuits; Optical amplifiers; Optical pumping; Power amplifiers; Power generation; Pulse amplifiers; Semiconductor optical amplifiers; Stimulated emission; Superluminescent diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630557

Filename

630557