The simplest potential-tailored quantum well for polarization-independent optical modulators

Author

Kato, Masaki ; Tada, Kunio ; Nakano, Yoshiaki

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

146

Abstract

In this paper, we propose a novel potential-tailored quantum well which we believe is the simplest and can easily be fabricated by molecular beam epitaxy (MBE). We show theoretically that polarization dependence of MQW-EA (multiple quantum well electroabsorption) modulators can be drastically reduced by this new quantum well. All quantum wells in this paper consist of 0.4%-tensile-strained-InGaAs wells and lattice-matched-InAlAs barriers on InP since the tensile strain helps achieving the polarization independent operation in this work

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; light polarisation; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; InAlAs; InGaAs; InP; MBE; MQW-EA modulators; lattice-matched-InAlAs barriers; molecular beam epitaxy; multiple quantum well electroabsorption modulators; polarization dependence; polarization independent operation; polarization-independent optical modulators; potential-tailored quantum well; tensile strain; tensile-strained-InGaAs wells; Absorption; Charge carrier processes; Electric variables measurement; Energy measurement; Facsimile; Molecular beam epitaxial growth; Optical modulation; Optical polarization; Quantum well devices; Repeaters;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630561

Filename

630561