DocumentCode
317138
Title
Low-temperature grown GaAs traveling wave PIN photodetector with high bandwidth
Author
Chiu, Yi-Jen ; Meischer, S.B. ; Bowers, John E.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
1
fYear
1997
fDate
10-13 Nov 1997
Firstpage
164
Abstract
Summary form only given. In summary, we have demonstrated a novel travelling wave photodetector (TWPD) by low temperature grown (LTG) GaAs with 1.1 ps pulse response. The bandwidth is twice as high as previous demonstration for traveling wave structure or for PIN structures
Keywords
gallium arsenide; low-temperature techniques; optical waveguides; photodetectors; semiconductor growth; 1.1 ps; GaAs; GaAs traveling wave PIN photodetector; PIN structures; high bandwidth; low-temperature grown; ps pulse response; travelling wave photodetector; Absorption; Annealing; Bandwidth; Coplanar waveguides; Gallium arsenide; Microwave measurements; Optical waveguides; Photodetectors; Signal detection; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.630569
Filename
630569
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