Title :
Low-temperature grown GaAs traveling wave PIN photodetector with high bandwidth
Author :
Chiu, Yi-Jen ; Meischer, S.B. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Summary form only given. In summary, we have demonstrated a novel travelling wave photodetector (TWPD) by low temperature grown (LTG) GaAs with 1.1 ps pulse response. The bandwidth is twice as high as previous demonstration for traveling wave structure or for PIN structures
Keywords :
gallium arsenide; low-temperature techniques; optical waveguides; photodetectors; semiconductor growth; 1.1 ps; GaAs; GaAs traveling wave PIN photodetector; PIN structures; high bandwidth; low-temperature grown; ps pulse response; travelling wave photodetector; Absorption; Annealing; Bandwidth; Coplanar waveguides; Gallium arsenide; Microwave measurements; Optical waveguides; Photodetectors; Signal detection; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630569
