RF MEMS for wireless-bands tunable networks

Summary form only given. This paper reviews the latest development in RF MEMS switches and switched-capacitors and their applications in tunable matching networks, filters and antennas specifically for the wireless bands from 800 MHz to 5.8 GHz. RF MEMS technology provide very low loss, high-Q switched-capacitors and varactors, and can be integrated above CMOS or on low cost glass substrate. The glass substrate integration is important for high-Q inductors and passive components such as resonators which are essential for tunable filter applications. Several designs such as the Philips/Nokia effort at 800 MHz-2.1 GHz, the IBM switch and its integration in the 7-HP process at DC-6 GHz, the Radant MEMS switch at DC-10 GHz, and the Lincoln Labs switch at 3-6 GHz are discussed. The talk also presents the different packaging techniques, from wafer-to-wafer packaging to in-situ dielectric packaging, and the latest reliability results of RF MEMS devices. Finally, we cover the linearity requirements of tunable networks in cell phone applications and why RF MEMS presents an excellent solution to GSM, CDMA and W-LAN standards