Title :
Effects of applied stress on the dielectric properties of PLZT thin films
Author :
Wang, F. ; Haertling, G.H.
Abstract :
The dielectric properties of electrooptic thin films were varied by altering the stresses placed upon the films. Selected thin films in the lanthanum-modified lead zirconate titanate system (PLZT) were produced by using the dip-coating process and applying various stresses. Comparisons were made among thin films under mechanically applied stresses of different magnitude. Properties measured were dielectric constant, saturation polarization, remanent polarization, coercive field and d-spacing. The effects of the applied stresses on the physical and electrical properties of the films are discussed
Keywords :
dielectric hysteresis; dielectric polarisation; electro-optical effects; ferroelectric materials; ferroelectric thin films; lanthanum compounds; lead compounds; permittivity; piezoceramics; piezoelectric thin films; PLZT; PLZT thin films; PbLaZrO3TiO3; applied stress effects; coercive field; d-spacing; dielectric constant; dielectric properties; dip-coating process; electrooptic thin films; mechanically applied stresses; remanent polarization; saturation polarization; Ceramics; Compressive stress; Dielectric measurements; Dielectric thin films; Electric variables measurement; Electrical resistance measurement; Hysteresis; Stress measurement; Tensile stress; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522490
