• DocumentCode
    3171426
  • Title

    Phase change memory — opportunities and challenges

  • Author

    Rajendran, Bipin ; Lung, Hsiang-Lan ; Lam, Chung

  • fYear
    2007
  • fDate
    16-20 Dec. 2007
  • Firstpage
    92
  • Lastpage
    95
  • Abstract
    This paper reviews the current development status of Phase Change Memory (PCM) and discusses an advanced scaling demonstration of this technology. A prospective view of possible applications for PCM is also presented.
  • Keywords
    phase change materials; random-access storage; phase change memory; scaling demonstration; Amorphous materials; CMOS technology; Crystallization; Lungs; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Semiconductor diodes; Temperature; CMOS memory integrated circuits; Random access memory; amorphous semiconductors; non-volatile memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-1728-5
  • Electronic_ISBN
    978-1-4244-1728-5
  • Type

    conf

  • DOI
    10.1109/IWPSD.2007.4472460
  • Filename
    4472460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3171426