Active space division switch fabrics using semiconductor optical amplifiers

Author

Kim, S. ; Gopinath, A.

Author_Institution

Minnesota Univ., Minneapolis, MN, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

202

Abstract

In this paper, we report theoretical study of this screening in strained InGaAsP based QW grown on (Ill)substrate and its IR gain spectrum under current injection. In a strained epitaxial layer oriented in the [111] direction, assuming that there are no free charges in the strained layer there is a strain-induced piezoelectric field

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared spectra; optical communication equipment; semiconductor lasers; semiconductor quantum wells; semiconductor switches; space division multiplexing; (Ill)substrate; IR gain spectrum; InGaAsP; active space division switch fabrics; current injection; free charges; semiconductor optical amplifiers; strain-induced piezoelectric field; strained InGaAsP based QW; strained epitaxial layer; strained layer; theoretical study; Absorption; Differential equations; Eigenvalues and eigenfunctions; Fabrics; Lattices; Matrix converters; Optical switches; Piezoelectric materials; Semiconductor optical amplifiers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630586

Filename

630586