Performance enhancement of the tunnel field effect transistor using a SiGe source

Author

Patel, Nayan B. ; Ramesha, A. ; Mahapatra, Santanu

Author_Institution

Indian Inst. of Sci., Bangalore

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

111

Lastpage

114

Abstract

Due to extremely low off state current (I_OFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (I_ON) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in I_ON compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.

Keywords

CMOS integrated circuits; Ge-Si alloys; emergency power supply; field effect transistors; semiconductor materials; CMOS technology; SiGe; device architecture; low standby power applications; off state current; performance enhancement; process flow; state current; subthreshold characteristics; tunnel field effect transistor; CMOS process; CMOS technology; FETs; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Silicon germanium; Threshold voltage; Tunneling; Sub-threshold swing; band to band tunneling; device simulation; gated p-i-n diode; tunnel field effect transistor (TFET);

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472465

Filename

4472465