Superlattice avalanche photodiodes

Author

Kagawa, Toshiaki

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

220

Abstract

Summary form only given. InGaAsP-InAlAs superlattice avalanche photodiode (SL-APD) is applied to the receiver of the analog video transmission as well as to the high-bit-rate digital transmission. The low noise, wide bandwidth, low distortion, and wide dynamic range characteristics of the SL-APD are fully exploited in the video transmission system. All of these characteristics are strongly related to the ratio between electron and hole ionization rates

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; digital television; gallium arsenide; gallium compounds; indium compounds; optical noise; optical receivers; semiconductor device noise; semiconductor superlattices; television networks; InGaAsP-InAlAs; InGaAsP-InAlAs superlattice avalanche photodiode; analog video transmission; electron ionization rates; high-bit-rate digital transmission; hole ionization rates; low distortion; low noise; receiver; superlattice avalanche photodiodes; video transmission system; wide bandwidth; wide dynamic range; Avalanche photodiodes; Bandwidth; Charge carrier processes; Dynamic range; Electrons; Frequency modulation; Ionization; Laboratories; Photonics; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630594

Filename

630594