Oxide-confined AlGaInP/AlGaAs visible resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy

Author

Jalonen, M. ; Toivonen, M. ; Köngäs, J. ; Savolainen, P. ; Salokatve, A. ; Pessa, M.

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

239

Abstract

Summary form only given. This paper reports the growth, fabrication, and characterization of the first solid source molecular beam epitaxially (SSMBE)-grown visible resonant cavity LED´s. The epitaxial layers were grown by SSMBE on (100) Si-doped GaAs (2-inch) wafers

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; optical fabrication; optical resonators; semiconductor growth; 2 inch; AlGaInP-AlGaAs; AlGaInP/AlGaAs visible resonant cavity light-emitting diodes; GaAs:Si; Si-doped GaAs; epitaxial layers; fabrication; oxide-confined; solid source molecular beam epitaxially grown; solid source molecular beam epitaxy; visible resonant cavity LED´s; Apertures; Gallium arsenide; Light emitting diodes; MOCVD; Molecular beam epitaxial growth; Optical arrays; Optical device fabrication; Oxidation; Resonance; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630604

Filename

630604