Title :
Si-based multi-finger n-MODFET RF power devices
Author :
Yuan, Hao-Chih ; Jiang, Ningyue ; Croke, Edward T. ; Ma, Zhenqiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
We report, for the first time, on the fabrication and characterizations of multi-finger n-type Si/SiGe modulation doped FETs (MODFET) for RF power amplifications. Under bias of VDS=5V, V GS=0V and continuous wave operation, load-pull measurements at 2 GHz from a 10-finger n-MODFET with a gate width of 500 (750) mum show that a maximum output power of 12 (14) dBm, power gain at 1 dB compression of 15 (16) dB, and maximum power added efficiency of 12 (15) % of MODFET device have been achieved
Keywords :
Ge-Si alloys; elemental semiconductors; high electron mobility transistors; microwave field effect transistors; power field effect transistors; silicon; 15 dB; 2 GHz; 5 V; 500 micron; RF power amplifications; RF power devices; Si-SiGe; load-pull measurement; modulation doped FET; multifinger n-MODFET; Epitaxial layers; FETs; Fabrication; Gain measurement; Germanium silicon alloys; HEMTs; MODFETs; Power measurement; Radio frequency; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587905
