• DocumentCode
    317165
  • Title

    InP microcavity LED emitting at 1.55 μm

  • Author

    Depreter, B. ; Bolondelie, J. ; Moerman, I. ; Baets, R. ; Van Daele, P. ; Demeester, P.

  • Author_Institution
    Ghent Univ., Belgium
  • Volume
    1
  • fYear
    1997
  • fDate
    10-13 Nov 1997
  • Firstpage
    241
  • Abstract
    An InP microcavity LED has been successfully grown using MOCVD. The device shows a narrow spectral linewidth, and a high external quantum efficiency that may be improved further after subsequent processing
  • Keywords
    III-V semiconductors; indium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor growth; spectral line breadth; 1.55 mum; InP; InP microcavity LED; MOCVD; high external quantum efficiency; narrow spectral linewidth; Bandwidth; Chromatic dispersion; Distributed Bragg reflectors; Indium phosphide; Light emitting diodes; MOCVD; Microcavities; Mirrors; Optical fiber communication; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-3895-2
  • Type

    conf

  • DOI
    10.1109/LEOS.1997.630605
  • Filename
    630605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=317165