Harmonic mode analysis of low-hi-low and high low Silicon DDDs

Author

Pati, S.P. ; Dash, S.K. ; Tripathy, P.R.

Author_Institution

Sambalpur Univ., Sambalpur

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

157

Lastpage

160

Abstract

Low-high-low and High-low doping profile IMPATT DDDs have been designed and optimized, analyzed for 15 GHz, 35 GHz, 60 and 94 GHz operations following computer simulation experiment for DC, high frequency and avalanche noise analysis. The results showed that efficiency as high as 28.7% is achievable for the 15 GHz DDD for low-hi-low doped junction and 26.8% for high-low junction, which is the optimum as per update report. The efficiency falls with frequency but remains sufficiently above flat counterpart. Each of the diodes has been analyzed for wide band operation in harmonic mode i.e. within the frequency range of 10-400 GHz. It is interesting to note that each of the diode exhibits multiple band frequency operation within the frequency range of analysis. The 15 GHz diode showed the existence of 15 frequency bands exhibiting RF negative resistance.

Keywords

IMPATT diodes; doping profiles; harmonic analysis; semiconductor device models; IMPATT DDD; RF negative resistance; avalanche noise analysis; computer simulation; doped junction; doping profile; frequency 10 GHz to 400 GHz; harmonic mode analysis; Computer simulation; Design optimization; Diodes; Doping profiles; Harmonic analysis; Impurities; Physics; Radio frequency; Silicon; Wideband; Avalanche noise; Si; high-low; low-hi-low;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472477

Filename

4472477