DocumentCode
317180
Title
1.3 μm GaInAsP lasers with Bragg reflector consisting of semiconductor and air
Author
Mukaihara, T. ; Yamanaka, N. ; Iwai, N. ; Nishikata, K. ; Ishikawa, T. ; Kasukawa, A.
Author_Institution
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Volume
1
fYear
1997
fDate
10-13 Nov 1997
Firstpage
272
Abstract
We report fabrication of 1.3 μm GaInAsP lasers with a semiconductor/air Bragg reflector (SABAR) and investigate its mirror performance. We evaluated the mirror performance based on threshold characteristics of the broad-area lasers. The SABAR fabricated by chemical etching achieves reasonable reflectivity of 50%
Keywords
III-V semiconductors; current density; etching; gallium arsenide; indium compounds; laser mirrors; laser transitions; optical fabrication; optical losses; quantum well lasers; reflectivity; 1.3 mum; GaInAsP; GaInAsP lasers; broad-area lasers; chemical etching; fabrication; mirror performance; reflectivity; semiconductor/air Bragg reflector; threshold characteristics; Absorption; Chemical lasers; Diffraction; Electrons; Etching; Laser modes; Mirrors; Reflectivity; Semiconductor lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.630621
Filename
630621
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