DocumentCode
3171804
Title
Design of a W-band Subharmonically pumped mixer based on a hybrid Schottky diode model
Author
Yu Wei-hua ; Mou Jin-chao ; Li Xiang ; Lv Xin
Author_Institution
Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China
fYear
2009
fDate
3-6 Nov. 2009
Firstpage
207
Lastpage
210
Abstract
This paper presents a hybrid Schottky diode model for mixer design. The model consists of two parts: the passive part and the active part. The passive part is built according to the dimensions of the diode which can be analyzed by EM simulator and the active part is built according to the I-V characteristic which can be analyzed by harmonic balanced simulator. Based on the proposed model, a W-band Subharmonically pumped mixer was designed, whose conversion loss is below 14 dB from 85 GHz to 93 GHz.
Keywords
III-V semiconductors; Schottky diode mixers; gallium arsenide; millimetre wave mixers; semiconductor device models; EM simulator; GaAs; W-band subharmonically pumped mixer; active part; conversion loss; frequency 85 GHz to 93 GHz; harmonic balanced simulator; hybrid Schottky diode model; passive part; GaAs Schottky diode; W-band; hybrid diode model; subharmonically pumped mixer;
fLanguage
English
Publisher
iet
Conference_Titel
Microwave Technology and Computational Electromagnetics, 2009. ICMTCE. International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-84919-140-1
Type
conf
DOI
10.1049/cp.2009.1301
Filename
5521284
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