Title :
A simple equation model for RF MOS FET
Author :
Ishihara, Noboru ; Shimizu, Toshihiko
Author_Institution :
Graduate Sch. of Eng., Electron. & Comput., Gunma Univ.
Abstract :
A simple equation RF MOS FET model using hyperbolic tangent functions and its parameter extraction technique have been demonstrated. Only twenty parameters are required without physical parameters depending on device structure. Submicron device can be easily characterized and the equivalent model can be understood briefly. The validity has been confirmed by characterizing a 0.23-mum RF power MOS FET. The model is useful especially for the RF analog circuit design engineers and education for the university students and beginners
Keywords :
microwave field effect transistors; power MOSFET; semiconductor device models; 0.23 micron; RF MOS FET model; RF power MOS FET; hyperbolic tangent functions; parameter extraction; Analog circuits; Circuit simulation; Equations; Equivalent circuits; FETs; MOSFETs; Parameter extraction; Radio frequency; Semiconductor device modeling; Threshold voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587915
