• DocumentCode
    3171825
  • Title

    The maximum useful doping concentration of the pinched base of SiGe HBTs: a theory study

  • Author

    Jiang, Ningyue ; Ma, Zhenqiang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
  • fYear
    2006
  • fDate
    18-20 Jan. 2006
  • Abstract
    The maximum useful base doping concentration that can be used to improve fmax of SiGe HBTs is investigated. 2D numerical device simulation and analytical results are compared to verify that f max does not always increase with the base doping concentration. Instead, the extrinsic base resistance is found to be the device parameter that greatly influences the dependence of fmax on the base doping concentration. The proper approach to improving fmax of SiGe HBTs is discussed
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor doping; 2D numerical device simulation; SiGe; base doping concentration; extrinsic base resistance; heterojunction bipolar transistors; pinched base; Analytical models; Bismuth; Doping profiles; Drives; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Radio frequency; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-9472-0
  • Type

    conf

  • DOI
    10.1109/SMIC.2005.1587916
  • Filename
    1587916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3171825