Title :
Nitrogen engineering in Titanium based high-k gate dielectrics on Ge
Author :
Mahata, C. ; Bera, M.K. ; Bose, P.K. ; Maiti, C.K.
Author_Institution :
Indian Inst. of Technol. Kharagpur, Kharagpur
Abstract :
In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO2 interfacial layer to its oxynitride, and thus forming a TiO2/GeOxN3/Ge stacked-gate structure with improved interfacial and electrical properties. Charge trapping, transient and reliability properties of nitrided gate dielectrics have also been investigated.
Keywords :
MOSFET; electric breakdown; germanium; germanium compounds; high-k dielectric thin films; titanium compounds; Ge; TiO2-GeOxNy-Ge; germanium compounds; high-k gate dielectrics; nitrogen engineering; titanium; Chemicals; Dielectric substrates; Germanium; High K dielectric materials; Nitrogen; Plasma chemistry; Plasma temperature; Sputtering; Surface discharges; Titanium; Germanium; TiO2; reliability; transient;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472485
