Title :
Growth of Ge nanoislands on Si (001) using molecular beam epitaxy
Author :
Singha, R.K. ; Das, S. ; Das, K. ; Dhar, A. ; Ray, S.K.
Author_Institution :
Indian Inst. of Technol. Kharagpur, Kharagpur
Abstract :
Self-assembled nano-sized Ge islands have been grown on Si (001) substrates using a solid source molecular beam epitaxy. Detailed island morphological studies at different deposition temperatures and flux rate of as-grown and annealed nanocrystals are reported. Both the alloy composition and in-plane strain in the grown islands have been determined from high-resolution XRD and Raman study. The shape and size of the grown islands and the coarsening mechanism are explicitly discussed with the help of data obtained from AFM topographic images. The current-voltage characteristics of a single isolated island exhibits Coulomb blockade behaviour at room temperature.
Keywords :
Coulomb blockade; Raman spectra; X-ray diffraction; annealing; atomic force microscopy; crystal morphology; elemental semiconductors; germanium; island structure; molecular beam epitaxial growth; nanostructured materials; self-assembly; semiconductor epitaxial layers; semiconductor growth; AFM topographic images; Coulomb blockade behaviour; Ge-Si; Raman study; Si; alloy composition; annealed nanocrystals; coarsening mechanism; current-voltage characteristics; high-resolution XRD; in-plane strain; island morphological studies; self-assembled nano-sized islands; solid source molecular beam epitaxy; Annealing; Capacitive sensors; Molecular beam epitaxial growth; Nanocrystals; Self-assembly; Shape memory alloys; Solids; Substrates; Temperature; X-ray scattering; Ge nanoislands; molecular beam epitaxy; self-assembly;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472486
