MOVPE growth of oxide-confined vertical-cavity surface emitting lasers

Author

Hou, H.Q. ; Choquette, K.D. ; Hammons, B.E. ; Breiland, W.G. ; Geib, K.M.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

301

Abstract

Summary form only given. In summary, we have demonstrated an optimized MOVPE technique for highly uniform and reproducible VCSEL growth, enabling high performance oxide-confined VCSELs with uniform lasing characteristics. In this paper, we show the capability to produce extremely high wafer uniformity, control accuracy on thickness and composition, and run-to-run reproducibility

Keywords

laser cavity resonators; measurement errors; optical fabrication; optimisation; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; MOVPE growth; composition; control accuracy; extremely high wafer uniformity; high performance oxide-confined VCSELs; highly uniform reproducible VCSEL growth; optimized MOVPE technique; oxide-confined vertical-cavity surface emitting lasers; run-to-run reproducibility; thickness; uniform lasing characteristics; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Inductors; Laboratories; Oxidation; Reproducibility of results; Surface emitting lasers; Thickness control; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630634

Filename

630634