Defect-free GaAs/AlAs distributed Bragg reflector mirrors an patterned InP-based heterostructures: application to 1.55 μm VCSELs

Author

Gebretsadik, H. ; Kamath, K. ; Linder, K. ; Bhattacharya, P. ; Caneau, C. ; Bhat, R.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

305

Abstract

We demonstrate here the MBE growth of GaAs-AlAs λ/4 Bragg mirrors (λ=1.55 μm) on patterned InP-based quantum well vertical cavity surface-emitting lasers (VCSEL) heterostructures, with misfit of 3.7%, without the generation of misfit dislocations

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser mirrors; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; surface emitting lasers; 1.55 mum; GaAs-AlAs; GaAs-AlAs λ/4 Bragg mirrors; InP; InP-based quantum well vertical cavity surface-emitting lasers; MBE growth; VCSEL heterostructures; VCSELs; defect-free GaAs/AlAs distributed Bragg reflector mirrors; misfit dislocations; patterned InP-based heterostructures; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Gallium arsenide; Lithography; Mirrors; Molecular beam epitaxial growth; Quantum well devices; Vertical cavity surface emitting lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630636

Filename

630636