Vertical cavity surface emitting laser emitting at 1.56 microns with AlGaAsSb/AlAsSb distributed Bragg reflectors

Author

Blum, O. ; Klem, J.F. ; Lear, K.L. ; Vawter, G.A. ; Kurtz, S.R.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

307

Abstract

Long-wavelength vertical cavity surface emitting lasers (VCSELs) are attractive for a variety of application, such as low cost sources for optical communications and optical interconnects. In order to realize a monolithic device, we have utilized an AlGaAsSb-AlAsSb material system lattice matched to InP as a means of forming highly reflecting distributed Bragg reflectors (DBRs) with relatively few mirror pairs. The structure was grown by molecular beam epitaxy

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; infrared sources; laser cavity resonators; laser mirrors; laser transitions; molecular beam epitaxial growth; optical fabrication; optical fabrication5809061; quantum well lasers; semiconductor growth; semiconductor lasers; surface emitting lasers; AlGaAsSb-AlAsSb; AlGaAsSb-AlAsSb material system; AlGaAsSb/AlAsSb distributed Bragg reflectors; InP; highly reflecting distributed Bragg reflectors; lattice matched; long-wavelength VCSELs; low cost sources; mirror pairs; molecular beam epitaxy; monolithic device; optical communications; optical interconnects; vertical cavity surface emitting laser; Costs; Distributed Bragg reflectors; Indium phosphide; Lattices; Mirrors; Optical fiber communication; Optical interconnections; Optical materials; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630637

Filename

630637