Title :
Vertical cavity surface emitting laser emitting at 1.56 microns with AlGaAsSb/AlAsSb distributed Bragg reflectors
Author :
Blum, O. ; Klem, J.F. ; Lear, K.L. ; Vawter, G.A. ; Kurtz, S.R.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Long-wavelength vertical cavity surface emitting lasers (VCSELs) are attractive for a variety of application, such as low cost sources for optical communications and optical interconnects. In order to realize a monolithic device, we have utilized an AlGaAsSb-AlAsSb material system lattice matched to InP as a means of forming highly reflecting distributed Bragg reflectors (DBRs) with relatively few mirror pairs. The structure was grown by molecular beam epitaxy
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; infrared sources; laser cavity resonators; laser mirrors; laser transitions; molecular beam epitaxial growth; optical fabrication; optical fabrication5809061; quantum well lasers; semiconductor growth; semiconductor lasers; surface emitting lasers; AlGaAsSb-AlAsSb; AlGaAsSb-AlAsSb material system; AlGaAsSb/AlAsSb distributed Bragg reflectors; InP; highly reflecting distributed Bragg reflectors; lattice matched; long-wavelength VCSELs; low cost sources; mirror pairs; molecular beam epitaxy; monolithic device; optical communications; optical interconnects; vertical cavity surface emitting laser; Costs; Distributed Bragg reflectors; Indium phosphide; Lattices; Mirrors; Optical fiber communication; Optical interconnections; Optical materials; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630637
