Title :
Simulation studies of current voltage characteristics of inhomogeneous Schottky diode
Author :
Chand, Subhash ; Bala, Saroj
Author_Institution :
Nat. Inst. of Technol., Hamirpur
Abstract :
The current voltage (I-V) data of inhomogeneous Schottky contact are simulated over wide temperature range assuming discrete Gaussian distribution of barrier heights and considering thermionic emission diffusion (TED) theory. The diode parameters are extracted by fitting of simulated I-V data into TED current equation. The temperature dependence of derived barrier parameters like barrier height and ideality factor and activation energy plots are discussed. The effect of various aspects of discrete distribution of BH is discussed in this paper.
Keywords :
Gaussian distribution; Schottky barriers; Schottky diodes; semiconductor device models; Schottky contact; activation energy plots; barrier heights; barrier inhomogeneities; current voltage characteristics; discrete Gaussian distribution; ideality factor; inhomogeneous Schottky diode; thermionic emission diffusion theory; Current-voltage characteristics; Data mining; Equations; Gaussian distribution; Schottky barriers; Schottky diodes; Temperature dependence; Temperature distribution; Thermionic emission; Voltage; Barrier inhomogeneities; Schottky barrier diode; current-voltage characteristics; simulation;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472489
