Simulation studies of current voltage characteristics of inhomogeneous Schottky diode

Author

Chand, Subhash ; Bala, Saroj

Author_Institution

Nat. Inst. of Technol., Hamirpur

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

228

Lastpage

231

Abstract

The current voltage (I-V) data of inhomogeneous Schottky contact are simulated over wide temperature range assuming discrete Gaussian distribution of barrier heights and considering thermionic emission diffusion (TED) theory. The diode parameters are extracted by fitting of simulated I-V data into TED current equation. The temperature dependence of derived barrier parameters like barrier height and ideality factor and activation energy plots are discussed. The effect of various aspects of discrete distribution of BH is discussed in this paper.

Keywords

Gaussian distribution; Schottky barriers; Schottky diodes; semiconductor device models; Schottky contact; activation energy plots; barrier heights; barrier inhomogeneities; current voltage characteristics; discrete Gaussian distribution; ideality factor; inhomogeneous Schottky diode; thermionic emission diffusion theory; Current-voltage characteristics; Data mining; Equations; Gaussian distribution; Schottky barriers; Schottky diodes; Temperature dependence; Temperature distribution; Thermionic emission; Voltage; Barrier inhomogeneities; Schottky barrier diode; current-voltage characteristics; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472489

Filename

4472489