Theoretical study of effect of position of dopant in a channel for nano scale devices

As the number of parameters such as carrier confinement, effects of parallel and transverse field- dependent mobility, carrier scattering due to Coulomb effects, acoustic phonons, impurity doping profile and surface roughness influences the transport process in the channel region. The simplest model of quantum transport in nano-devices is to describe the problem in terms of the scattering of the electron wave-function by a spatially varying potential. Here, we assume that this potential is situated between two electron reservoirs, each of which emits particles with an equilibrium distribution into the scattering region which is doped by impurity. As the reservoirs will, in general, have different chemical potentials, their difference representing an applied bias voltage. The net flux of electrons passing between the reservoirs constitutes the electrical current conducted by the device.