• DocumentCode
    317206
  • Title

    Design consideration of semiconductor optical amplifier linearity

  • Author

    Chen, J.H. ; Zhao, X. ; Choa, F.S.

  • Author_Institution
    Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
  • Volume
    1
  • fYear
    1997
  • fDate
    10-13 Nov 1997
  • Firstpage
    329
  • Abstract
    Summary form only given. High linearity semiconductor optical amplifiers (SOAs) are important for 1.3 μm single-channel CATV amplifiers in (WDM) system applications. The amplification nonlinearity or crosstalk between channels are caused by gain nonlinearity generated from the gain compression effect. We have considered important design factors which can affect the gain linearity of an SOA. Device concepts based on current injection profile are proposed and numerically demonstrated to achieve gain and less crosstalk
  • Keywords
    cable television; infrared sources; laser transitions; nonlinear optics; optical crosstalk; optical design techniques; optical transmitters; semiconductor device models; semiconductor lasers; wavelength division multiplexing; 1.3 mum; WDM system applications; amplification nonlinearity; crosstalk; current injection profile; design factors; device concepts; gain compression; gain linearity; gain nonlinearity; high linearity semiconductor optical amplifiers; less crosstalk; semiconductor optical amplifier linearity; single-channel CATV amplifiers; Computer science; Linearity; Optical amplifiers; Optical crosstalk; Optical design; Optical waveguides; Power amplifiers; Power generation; Semiconductor optical amplifiers; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-3895-2
  • Type

    conf

  • DOI
    10.1109/LEOS.1997.630649
  • Filename
    630649