Modelling of long wavelength polarisation-insensitive semiconductor laser amplifiers containing tensile and compressive wells

The authors theoretical and experimental results show that they can accurately predict the performance of semiconductor laser amplifiers that contain separate compressive and tensile wells and hence design devices which are polarisation-independent. They also show that the gain of a combined tensile and compressive quantum well device is not simply a linear combination of the gains from individual layers, as has been previous thought. Modelling of carrier redistribution between the quantum wells in the whole structure can be crucial for accurate design of polarisation-independent operation