Design of distributed amplifiers and oscillators in 130 nm SOI MOS technology

Author

Moussa, M. Si ; Pavageau, C. ; Picheta, L. ; Danneville, F. ; Russat, J. ; Fel, N. ; Raskin, J.-P. ; Vanhoenacker-Janvier, D.

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium

fYear

2006

fDate

18-20 Jan. 2006

Abstract

In this paper, the design and the results of two CMOS silicon-on-insulator (SOI) distributed amplifiers (DA) are presented. Partially-depleted SOI process using microstrip lines, and floating-body (FB) transistors are considered. The measured gain is around 4.5 dB with a 0.4-30 GHz bandwidth for the common source DA (CSDA) and around 7 dB with a 0.4-26 GHz bandwidth for the cascode DA (CDA). The optimized performances were found for 1.4 V supply voltage, which corresponds to a DC power consumption of 66 and 55 mW for the CSDA and the CDA, respectively. The CSDA circuit has been extended to design a distributed oscillator (DO) at 12 GHz, and CDA to a cascaded CDA with a cut-off frequency of 48 GHz and 8 dB gain.

Keywords

CMOS integrated circuits; MMIC amplifiers; MMIC oscillators; distributed amplifiers; integrated circuit design; microstrip lines; silicon-on-insulator; 0.4 to 30 GHz; 1.4 V; 12 GHz; 130 nm; 48 GHz; 55 mW; 66 mW; 8 dB; CMOS silicon-on-insulator distributed amplifiers; SOI MOS technology; cascode distributed amplifier; common source distributed amplifier; distributed oscillators; floating-body transistors; microstrip lines; partially-depleted SOI process; Bandwidth; CMOS technology; Circuits; Distributed amplifiers; Energy consumption; Gain measurement; Microstrip components; Oscillators; Silicon on insulator technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Print_ISBN

0-7803-9472-0

Type

conf

DOI

10.1109/SMIC.2005.1587940

Filename

1587940