MMIC technology at Gallium Arsenide Enabling Technology Centre

Author

Muralidharan, R.

Author_Institution

Gallium Arsenide Technol. Enabling Centre (GAETEC), Hyderabad

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

303

Lastpage

306

Abstract

An overview of the activities at Gallium Arsenide Enabling TEchnology Centre (GAETEC) at Hyderabad, India is being presented here. GAETEC is a vertically integrated foundry with design, fabrication, assembly, testing, packaging and module-making facilities. The technologies available for production would be described in detail, and mention would be made of those being implemented. Examples of products developed and delivered, and those under development would also be given.

Keywords

MMIC; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; integrated circuit manufacture; GAETEC; Gallium Arsenide Enabling Technology Centre; Hyderabad; India; MESFET; MMIC technology; metal semiconductor field effect transistors; monolithic microwave integrated circuits; pseudomorphic HEMT; pseudomorphic high electron mobility transistors; vertically integrated foundry; Circuit testing; Etching; Gallium arsenide; Gold; MESFETs; MMICs; PHEMTs; Polyimides; Resistors; Switches; MESFET; MMIC; pseudomorphic HEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472504

Filename

4472504