DocumentCode
3172407
Title
Extraction and modeling of physics-based gate resistance components in RF MOSFETs
Author
Kang, Myounggon ; Kang, In Man ; Shin, Hyungcheol
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ.
fYear
2006
fDate
18-20 Jan. 2006
Abstract
A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. The proposed physics-based gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers, channel lengths, and widths
Keywords
MOSFET; microwave transistors; semiconductor device models; RF MOSFET; channel resistance; gate electrode resistance; parameter extraction; CMOS technology; Data mining; Electrical resistance measurement; Electrodes; Equivalent circuits; Fingers; MOSFETs; Parameter extraction; Radio frequency; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-9472-0
Type
conf
DOI
10.1109/SMIC.2005.1587949
Filename
1587949
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