Title :
Extraction and modeling of physics-based gate resistance components in RF MOSFETs
Author :
Kang, Myounggon ; Kang, In Man ; Shin, Hyungcheol
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ.
Abstract :
A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. The proposed physics-based gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers, channel lengths, and widths
Keywords :
MOSFET; microwave transistors; semiconductor device models; RF MOSFET; channel resistance; gate electrode resistance; parameter extraction; CMOS technology; Data mining; Electrical resistance measurement; Electrodes; Equivalent circuits; Fingers; MOSFETs; Parameter extraction; Radio frequency; Thermal resistance;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587949
