DocumentCode
3172449
Title
On the relations between Y- and H-noise representations in MOSFETs and importance of noise source correlation
Author
Cui, Yan ; Niu, Guofu ; Taylor, Stewart S.
Author_Institution
Dept. of Electron. & Comput. Eng., Auburn Univ., AL
fYear
2006
fDate
18-20 Jan. 2006
Abstract
The relations between the Y- and H-noise representations for MOSFETs are examined, and the importance of correlation for both representations is quantified. The theoretical values of alphavh , gammaih and CH are derived for the first time for long channel devices. CH is shown theoretically to have a zero imaginary part. The H-representation has the inherent advantage of a more negligible correlation, which makes circuit design and simulation easier
Keywords
MOSFET; semiconductor device models; semiconductor device noise; H-noise representation; MOSFET; Y-noise representation; circuit design; circuit simulation; noise source correlation; Circuit noise; Circuit simulation; Circuit synthesis; Electronic mail; Frequency; Gallium arsenide; Genetic expression; MESFETs; MOSFETs; Microelectronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-9472-0
Type
conf
DOI
10.1109/SMIC.2005.1587952
Filename
1587952
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