Towards vertical III-V nanowire devices

Author

Borgström, Magnus T. ; Immink, George ; Ketelaars, Bas ; Verheijen, Marcel A. ; Algra, Rienk ; Bakkers, Erik P.A.M.

Author_Institution

Lund Univ., Lund

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

343

Lastpage

343

Abstract

Investigation and understanding of growth parameters determining nanowire growth rates is necessary. For vertical architecture design relying on closely-spaced nanowire-based devices, absolute control of growth rates and wire (device) dimensions is required. Heterostructured nanowires where the segment dimensions critically determine quantization effects and thus the (opto) electronic properties of the wires were synthesized.

Keywords

III-V semiconductors; catalysis; nanowires; semiconductor devices; semiconductor growth; catalyst fraction enhanced nanowire growth; growth parameters; heterostructured nanowires; nanowire growth rates; optoelectronic properties; quantization effects; semiconducting nanowire devices; vapor-liquid-solid growth mode; vertical III-V nanowire devices; wire dimensions; Crystalline materials; III-V semiconductor materials; Laboratories; Nanoscale devices; Nanostructured materials; Optical materials; Physics; Semiconductivity; Solid state circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472513

Filename

4472513