• DocumentCode
    3172536
  • Title

    High quality layered Pr/sub 2/Ti/sub 2/O/sub 7//SiO/sub 2/ MIM capacitor for mixed signal applications

  • Author

    Wenger, Ch. ; Sorge, R. ; Schroeder, T. ; Mane, A.U. ; Knoll, D. ; Dabrowski, J. ; Müssig, H. -J

  • Author_Institution
    IHP, Frankfurt
  • fYear
    2006
  • fDate
    18-20 Jan. 2006
  • Abstract
    The performance of layered Pr2Ti2O7 /SiO2 MIM capacitors for mixed-signal and RF device applications is presented for the first time. A capacitance density of 3.2 fF/mum2 with a very low leakage parameter of 5 fA/pFV and quadratic voltage capacitance coefficient of -100 ppm/V2 was achieved. The extrapolated operating voltage for 10 years lifetime is 3 V
  • Keywords
    MIM devices; capacitors; mixed analogue-digital integrated circuits; praseodymium compounds; silicon compounds; titanium compounds; 10 years; 3 V; MIM capacitors; Pr2Ti2O7-SiO2; capacitance density; low leakage parameter; mixed signal integrated circuits; quadratic voltage capacitance coefficient; Capacitance; Dielectric substrates; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Metal-insulator structures; Plasma temperature; Radio frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-9472-0
  • Type

    conf

  • DOI
    10.1109/SMIC.2005.1587957
  • Filename
    1587957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3172536