• DocumentCode
    3172545
  • Title

    Experimental and modelled configuration of double-barrier HBV based on Al0.7Ga0.3As/GaAs

  • Author

    Nicolae, B. ; Chowdhury, D. Roy ; Hartnagel, H.L.

  • Author_Institution
    Tech. Univ. Darmstadt, Darmstadt
  • fYear
    2007
  • fDate
    16-20 Dec. 2007
  • Firstpage
    351
  • Lastpage
    354
  • Abstract
    Results are presented on device models for an optimisation of processes. In particular the double-barrier Al0.7Ga0.3As/GaAs heterostructure barrier varactor (HBV) designed using the commercial software Synopsys ISE- TCADreg, with accuracy higher than generally published. The design takes into account all the technological steps that are involved during the development of the HBV. The comparison with the measurements shows that the accuracy is higher than standard available models.
  • Keywords
    aluminium compounds; gallium arsenide; optimisation; semiconductor device models; technology CAD (electronics); varactors; Al0.7Ga0.3As-GaAs; Synopsys ISE- TCAD; double-barrier HBV; heterostructure barrier varactor; optimisation; Coaxial components; Fabrication; Frequency conversion; Gallium arsenide; Helium; Measurement standards; Molecular beam epitaxial growth; Ohmic contacts; Substrates; Varactors; Heterostructure barrier varactor; frequency multiplier; modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-1728-5
  • Electronic_ISBN
    978-1-4244-1728-5
  • Type

    conf

  • DOI
    10.1109/IWPSD.2007.4472516
  • Filename
    4472516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3172545