Studies on GaAs/AlGaAs based (p and n-type) quantum well infrared photodetector structures grown using MOVPE

Author

Dixit, V.K. ; Singh, S.D. ; Sharma, T.K. ; Ganguli, Tapas ; Jangir, Ravindra ; Pal, Suparna ; Khattak, B.Q. ; Srivastava, A.K. ; Srivastava, Himanshu ; Oak, S.M.

Author_Institution

Raja Ramanna Centre for Adv. Technol., Indore

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

355

Lastpage

358

Abstract

GaAs/AlGaAs based (p and n-type) 50 periods quantum well infrared detector structures were grown using metal organic vapour phase epitaxy (MOVPE). The crystalline quality, optical properties, carrier doping profile and intersubband absorption were studied in detail. These studies were carried out with overall motivation to understand whether p-QWIPs can have comparable or better performance than n-QWIPs considering normal incidence and device processing advantages.

Keywords

III-V semiconductors; MOCVD; aluminium alloys; carrier mobility; conduction bands; doping profiles; gallium arsenide; infrared detectors; optical properties; photodetectors; quantum well devices; vapour phase epitaxial growth; MOVPE; carrier doping profile; crystalline quality; device processing advantages; intersubband absorption; metal organic vapour phase epitaxy; normal incidence; optical property; p-QWIP; quantum well infrared photodetector structures; Doping profiles; Electromagnetic wave absorption; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gold; Infrared detectors; Ohmic contacts; Photodetectors; Transmission electron microscopy; ECV; Infrared; Inter-subband; QWIP;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472517

Filename

4472517