• DocumentCode
    3172583
  • Title

    Simplified theory of optical nonlinearities in spin-polarized bulk GaAs

  • Author

    Joshua, Arjun ; Venkataraman, V.

  • Author_Institution
    Indian Inst. of Sci., Bangalore
  • fYear
    2007
  • fDate
    16-20 Dec. 2007
  • Firstpage
    359
  • Lastpage
    362
  • Abstract
    Apart from their intrinsic physical interest, spin-polarized many-body effects are expected to be important to the working of spintronic devices. A vast literature exists on the effects of a spin-unpolarized electron-hole plasma on the optical properties of a semiconductor. Here, we include the spin degree of freedom to model optical absorption of circularly polarized light by spin-polarized bulk GaAs. Our model is easy to implement and does not require elaborate numerics, since it is based on the closed-form analytical pair-equation formula that is valid in 3d. The efficacy of our approach is demonstrated by a comparison with recent experimental data.
  • Keywords
    III-V semiconductors; gallium arsenide; light absorption; magnetoelectronics; GaAs; circularly polarized light; closed-form analytical pair-equation formula; optical absorption; optical nonlinearities; semiconductor; spin-polarized many-body effects; spin-unpolarized electron-hole plasma; spintronic devices; Absorption; Electron optics; Gallium arsenide; Magnetoelectronics; Optical devices; Optical polarization; Optical pumping; Photonic band gap; Plasma density; Vertical cavity surface emitting lasers; Many-body effects; Optical properties of III-V semiconductors; Pump-probe spectroscopy; Spintronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-1728-5
  • Electronic_ISBN
    978-1-4244-1728-5
  • Type

    conf

  • DOI
    10.1109/IWPSD.2007.4472518
  • Filename
    4472518