Title :
Integration of ultra wide band high pass filter using high performance inductors in advanced high resistivity SOI CMOS technology
Author :
Gianesello, F. ; Gloria, D. ; Raynaud, C. ; Tinella, C. ; Vincent, P. ; Saguin, F. ; Boret, S. ; Clement, C. ; Van-Haaren, B. ; Fournier, J.M. ; Dambrine, G. ; Benech, Ph.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
Among the numerous incoming new wireless standards, ultra wideband (UWB) systems are very attracting since they are able to transmit data over a wide spectrum of frequency bands with very low power and high data rates. The frequency band extends from 3.1 to 10.6 GHz. Consequently, parasitic capacitance and substrate losses will remain key parameters to achieve system requirement. In this work, the potential of STMicroelectronics 0.13 mum SOI CMOS technology using high resistivity substrate (HR) is discussed, in order to integrate RF filters. Techniques to improve SOI integrated inductors in term of quality factor and operation bandwidth were evaluated. Finally, an example of integrated filter suitable for 7-10.6 GHz UWB applications were provided and compared with equivalent bulk technology
Keywords :
CMOS integrated circuits; high-pass filters; inductors; low-power electronics; microwave filters; silicon-on-insulator; ultra wideband technology; 0.13 micron; 3.1 to 10.6 GHz; SOI CMOS technology; high resistivity substrate; integrated RF filters; integrated inductors; parasitic capacitance; substrate losses; ultra wide band high pass filter; Band pass filters; CMOS process; CMOS technology; Conductivity; Inductors; Parasitic capacitance; Pulse modulation; Q factor; Radio frequency; Ultra wideband technology;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587959
