Title :
I-V-T, C-V and photoelectric characteristics of Ni-GaN Schottky and n+ InN-GaN Heterostructure Interface
Author :
Mahmood, Z.H. ; Shah, A.P. ; Kadir, Abdul ; Gokhale, M.R. ; Ghosh, Sandip ; Bhattacharya, Arnab ; Arora, B.M.
Author_Institution :
Univ. of Dhaka, Dhaka
Abstract :
We discuss I-V-T, C-V and photoelectric characteristics of Ni-GaN Schottky and n+ InN-GaN heterostructure interfaces. The Schottky barrier heights obtained from the temperature dependence of I-V characteristics, from C-V measurements, and the photoresponse are compared. From internal photoemission measurements, band offsets at the InN-GaN heterointerface are experimentally determined.
Keywords :
Schottky barriers; photoemission; C-V; I-V-T; InN-GaN; Ni-GaN; Schottky barrier heights; band offsets; heterostructure interface; internal photoemission measurements; photoelectric characteristics; Capacitance-voltage characteristics; Gallium nitride; Inorganic materials; Lithography; Ohmic contacts; Photoelectricity; Physics; Schottky barriers; Schottky diodes; Temperature distribution; Band offset; Internal Photoemission; Ni-GaN Schottky; n+ InN-GaN heterojunction;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472520
