3-dimensional analytical modeling and simulation of fully depleted AlGaN/GaN modulation doped field effect transistor

We propose a simple and accurate three- dimensional (3-D) analytical model for the threshold voltage of AlGaN/GaN modulation doped field effect transistor (MODFET) taking into account the short channel effects (SCEs) and the narrow width effects (NWEs) present simultaneously in a small geometry device. The model includes the effect of vital parameters such as doping and thickness of the barrier layer on the threshold voltage. The accuracy of the proposed analytical model is verified by comparing the model results with 3-D device simulations. It has been demonstrated that the proposed model correctly predicts the potential, the electric field distribution along the channel and the threshold voltage.