65-GHz receiver in SiGe BiCMOS using monolithic inductors and transformers

Author

Gordon, Michael Q. ; Yao, Terry ; Voinigescu, Sorin P.

Author_Institution

Edward S. Rogers Sr. Dept. of ECE, Toronto Univ., Ont., Canada

fYear

2006

fDate

18-20 Jan. 2006

Abstract

This paper describes a single-chip 65-GHz SiGe BiCMOS radio receiver IC which includes an LNA, a transformer balun, a downconversion mixer, an IF amplifier, and a 65-GHz VCO. The single-ended downconversion gain is 21 dB with an input compression point of -22 dBm. The DSB receiver noise figure is a record 12 dB for IF frequencies in the 0 to 2 GHz range. By employing only transformers and inductors as matching elements, the die area, which includes all pads, is 790 μm × 740 μm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; inductors; low noise amplifiers; millimetre wave amplifiers; millimetre wave mixers; millimetre wave oscillators; millimetre wave receivers; millimetre wave transistors; radio receivers; transformers; voltage-controlled oscillators; 0 to 2 GHz; 12 dB; 21 dB; 65 GHz; 740 micron; 790 micron; BiCMOS radio receiver integrated circuit; IF amplifier; SiGe; downconversion mixer; low noise amplifers; monolithic inductors; monolithic transformers; transformer balun; voltage controlled oscillators; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Impedance matching; Inductors; Radiofrequency amplifiers; Receivers; Silicon germanium; Transformers; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Print_ISBN

0-7803-9472-0

Type

conf

DOI

10.1109/SMIC.2005.1587965

Filename

1587965