SiGe BiCMOS topologies for low-voltage millimeter-wave voltage controlled oscillators and frequency dividers

Author

Dickson, Timothy O. ; Voinigescu, Sorin P.

Author_Institution

Edward S. Rogers, Sr. Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

2006

fDate

18-20 Jan. 2006

Abstract

BiCMOS topologies for mm-wave voltage-controlled oscillators and frequency dividers are presented. The topologies, based on a MOS-HBT cascode configuration, enable low-voltage operation without compromising speed. A 37-GHz Colpitts VCO with 8% tuning bandwidth is reported with a phase noise of -97 dBc/Hz at a 1-MHz offset. For the first time, experimental evidence confirms that the bias condition for optimal VCO phase noise coincides with the bias point for minimum noise figure. Additionally, frequency division up to 70 GHz is reported, which is believed to be a record for dividers employing n-channel MOSFETs.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MOSFET; frequency dividers; heterojunction bipolar transistors; low-power electronics; millimetre wave frequency convertors; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 1 MHz; 37 GHz; 70 GHz; BiCMOS topologies; Colpitts voltage controlled oscillators; MOS-HBT cascode configuration; MOSFET; SiGe; heterojunction bipolar transistors; low-voltage millimeter-wave frequency dividers; low-voltage millimeter-wave voltage controlled oscillators; phase noise; Bandwidth; BiCMOS integrated circuits; Frequency conversion; Germanium silicon alloys; Noise figure; Phase noise; Silicon germanium; Topology; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Print_ISBN

0-7803-9472-0

Type

conf

DOI

10.1109/SMIC.2005.1587967

Filename

1587967