Comparison of 4H-SiC over wurtzite-GaN for IMPATT applications at 140 GHz

Summary form only given. The mm-wave as well as noise properties of IMPATT diode at D-band are efficiently determined with 4H-SiC and GaN as base materials. The results show that SiC IMPATT diode is capable of generating high microwave power at 140 GHz as compared to GaN IMPATT diode designed for the same frequency of operation. It is also observed that GaN exhibits better noise behaviour than SiC for IMPATT operation at 140 GHz. A tradeoff between the power output and noise from the device reveals that GaN would be a suitable base material for high power application of IMPATT diode with moderate noise.