A direct conversion multi-band CDMA transmitter with single common resistive RF modulator and LO generation

Author

Villain, F. ; Burg, O. ; Herault, G.

Author_Institution

Philips Semicond., Caen

fYear

2006

fDate

18-20 Jan. 2006

Abstract

A highly integrated multi-frequency CDMA transmitter using a simplified architecture based on a single common RF modulator and LO generation is presented. This chip up converts directly the I/Q base band signal to RF in two stages and delivers the RF signal to the power amplifier. The chip provides more than 80dB power control range in both bands and it is designed to deliver +5.5dBm in CDMA mode in cellular band and +7dBm in CDMA mode in PCS band at 70 mA and 79 mA respectively at nominal supply and temperature. It also provides -51 dBc and -57 dBc ACPR for the low and high bands. The chip was implemented using the Philips 0.25 mum BICMOS Qubic4+ process

Keywords

BiCMOS integrated circuits; code division multiple access; modulators; oscillators; radio transmitters; 0.25 micron; 70 to 79 mA; BICMOS Qubic4+ process; direct conversion multiband CDMA transmitter; local oscillator generation; multifrequency CDMA transmitter; power amplifier; single common resistive RF modulator; BiCMOS integrated circuits; Multiaccess communication; Personal communication networks; Power amplifiers; Power control; RF signals; Radio frequency; Radiofrequency amplifiers; Temperature distribution; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-9472-0

Type

conf

DOI

10.1109/SMIC.2005.1587975

Filename

1587975