Title :
High temperature electrical properties of ultra thin Ta2O5 films on ZnO/n-Si heterolayrs
Author :
Nandi, S.K. ; Tiwari, Jitendra N.
Author_Institution :
Rishi Bankim Chandra Coll., Naihati
Abstract :
Ultrathin Ta2O5 films have been deposited on ZnO/n-Si substrate by microwave plasma enhanced chemical vapor deposition technique. Using metal insulator semiconductor (MIS) capacitor structures, the capacitance-voltage and the leakage current characteristics of Ta2O5 films have been investigated in the temperature range of 27-200degC. Poole-Frenkel current conduction mechanism was found to be dominated at high temperature.
Keywords :
MIS capacitors; chemical vapour deposition; semiconductor thin films; Poole-Frenkel current conduction mechanism; Ta2O5; ZnO; high temperature electrical properties; metal insulator semiconductor capacitor structures; microwave plasma enhanced chemical vapor deposition technique; temperature 27 C to 200 C; ultra thin films; Chemical vapor deposition; Insulation; Metal-insulator structures; Microwave theory and techniques; Plasma chemistry; Plasma properties; Plasma temperature; Semiconductor films; Substrates; Zinc oxide; Dielectric materials; MIS devices; MOS capacitors; Plasma CVD;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472537
