Improvement of electrical and thermoelectric properties of CdO thin film by aluminum doping

Author

Saha, Biswajit ; Thapa, Ranjit ; Chattopadhyay, Kalyan K.

Author_Institution

Jadavpur Univ., Kolkata

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

423

Lastpage

426

Abstract

CdO thin films doped with Al have been prepared by radio frequency magnetron sputtering technique. The films were deposited on glass substrates at a temperature of 473 K and at a pressure of 0.1 mbar in (Ar + O₂) atmosphere. The deposited films were characterized by studying X-ray diffraction, AFM image, XPS spectra, electrical conductivity and thermoelectric properties. Films with different atomic % of Al have the same cubic structure good uniformity and high transparency. The Al doped CdO films deposited with optimized sputtering parameters are found to have high electrical conductivity along with very good thermoelectric power.

Keywords

aluminium; cadmium compounds; electrical conductivity; semiconductor doping; semiconductor thin films; sputtering; thermoelectric power; AFM image; CdO:Al; X-ray diffraction; XPS spectra; electrical conductivity; pressure 0.1 mbar; radio frequency magnetron sputtering technique; temperature 473 K; thermoelectric properties; thin films; Aluminum; Conductive films; Conductivity; Doping; Glass; Radio frequency; Sputtering; Substrates; Thermoelectricity; Transistors; CdO; Electrical Conductivity; Thermoelectric power; Thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472539

Filename

4472539