DocumentCode :
3172992
Title :
Improvement of electrical and thermoelectric properties of CdO thin film by aluminum doping
Author :
Saha, Biswajit ; Thapa, Ranjit ; Chattopadhyay, Kalyan K.
Author_Institution :
Jadavpur Univ., Kolkata
fYear :
2007
fDate :
16-20 Dec. 2007
Firstpage :
423
Lastpage :
426
Abstract :
CdO thin films doped with Al have been prepared by radio frequency magnetron sputtering technique. The films were deposited on glass substrates at a temperature of 473 K and at a pressure of 0.1 mbar in (Ar + O2) atmosphere. The deposited films were characterized by studying X-ray diffraction, AFM image, XPS spectra, electrical conductivity and thermoelectric properties. Films with different atomic % of Al have the same cubic structure good uniformity and high transparency. The Al doped CdO films deposited with optimized sputtering parameters are found to have high electrical conductivity along with very good thermoelectric power.
Keywords :
aluminium; cadmium compounds; electrical conductivity; semiconductor doping; semiconductor thin films; sputtering; thermoelectric power; AFM image; CdO:Al; X-ray diffraction; XPS spectra; electrical conductivity; pressure 0.1 mbar; radio frequency magnetron sputtering technique; temperature 473 K; thermoelectric properties; thin films; Aluminum; Conductive films; Conductivity; Doping; Glass; Radio frequency; Sputtering; Substrates; Thermoelectricity; Transistors; CdO; Electrical Conductivity; Thermoelectric power; Thin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
Type :
conf
DOI :
10.1109/IWPSD.2007.4472539
Filename :
4472539
Link To Document :
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