DocumentCode
3172996
Title
CMOS foundry Schottky diode microwave power detector fabrication, Spice modeling, and application
Author
Jeon, W. ; Melngailis, J.
Author_Institution
Inst. for Res. in Electron. & Appl. Phys., Maryland Univ., College Park, MD
fYear
2006
fDate
18-20 Jan. 2006
Abstract
CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35mu CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schotkty diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits
Keywords
CMOS integrated circuits; SPICE; Schottky diodes; microwave detectors; 0.35 micron; CMOS Schottky diodes; DC direct injection; RF direct injection; Spice modeling; charge pump circuits; microwave power detector fabrication; CMOS process; Circuit testing; Detectors; Fabrication; Foundries; Geometry; Radio frequency; SPICE; Schottky diodes; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-9472-0
Type
conf
DOI
10.1109/SMIC.2005.1587979
Filename
1587979
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