High-performance SiGe power HBTs with wide emitter stripes

Common-emitter and common-base SiGe power heterojunction bipolar transistors (PHBTs) with 2mum and 3mum emitter stripe widths have been fabricated and compared. The reduced base pinch resistance resulting from using a heavily doped base region has enabled excellent and equivalent RF performance from SiGe PHBTs of different emitter stripe widths. However, the total device area is saved by using wider emitter stripes. The current device design approach can help reduce the fabrication cost of SiGe PHBTs and make them more competitive than other existing technologies for microwave and RF power applications