Impact of growth parameters on the structural properties of InP/GaAs type-II quantum dots grown by metal-organic vapour phase epitaxy

Author

Singh, S.D. ; Sharma, T.K. ; Mukherjee, C. ; Oak, S.M.

Author_Institution

Raja Ramanna Centre for Adv. Technol., Indore

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

439

Lastpage

442

Abstract

Impact of growth parameters like temperature, coverage and V/III ratio on size and density of metal organic vapour phase epitaxy (MOVPE) grown InP/GaAs quantum dots (QDs) have been studied by using atomic force microscopy technique. It is observed that the QD density saturates after 4.4 MLs of InP coverage. QD density increases and size uniformity improves with the reduction of V/III ratio. A maximum QD density of 4x10¹⁰ cm^-2 has been achieved at a growth temperature of 550degC with a V/III ratio of 110 and 3.3 MLs of InP, which is one of the best reported by MOVPE technique in the literature.

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; GaAs; InP; MOVPE; V/III ratio; atomic force microscopy technique; growth parameters; metal-organic vapour phase epitaxy; structural properties; type-II quantum dots; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Inductors; Quantum dot lasers; Quantum dots; Temperature; Atomic force microscopy; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472543

Filename

4472543